AON6520 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 50a r ds(on) (at v gs =10v) < 8.5m w r ds(on) (at v gs =4.5v) < 11m w 100% uis tested 100% r g tested symbol v ds v gs v 20 gate-source voltage drain-source voltage 30 the AON6520 uses advanced trench technology to provide excellent r ds(on) , low gate charge.this device is suitable for use as a high side switch in smps and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v g ds top view 12 3 4 87 6 5 pin1 dfn5x6 top view bottom view v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc typ max t c =25c 1.9 12.5 t c =100c junction and storage temperature range -55 to 150 power dissipation b p d c thermal characteristics units maximum junction-to-ambient a c/w r q ja 24 53 30 parameter 9 a v 20 gate-source voltage a t a =25c i dsm 140 pulsed drain current c continuous drain current i d 50 29 t c =25c t c =100c continuous drain current 31 11 35 avalanche energy l=0.05mh c w a t a =70c mj avalanche current c power dissipation a p dsm w t a =70c 31 1.2 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.4 64 4 rev 0: aug 2011 www.aosmd.com page 1 of 6
AON6520 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 1.95 2.5 v i d(on) 140 a 7 8.5 t j =125c 10 12 8.5 11 m w g fs 55 s v sd 0.72 1 v i s 35 a c iss 920 1150 1380 pf c oss 125 180 235 pf c rss 60 105 150 pf r g 0.55 1.1 1.65 w q g (10v) 16 20 24 nc q g (4.5v) 7.6 9.5 11.4 nc q gs 2 2.7 3.2 nc q gd 3 5 7 nc t d(on) 6.5 ns t 2 ns i s =1a,v gs =0v v ds =5v, i d =20a switching parameters maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge r ds(on) static drain-source on-resistance diode forward voltage v =10v, v =15v, r =0.75 w , reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz drain-source breakdown voltage i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a on state drain current v gs =4.5v, i d =20a forward transconductance v ds =v gs i d =250 m a v ds =0v, v gs = 20v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions m w i dss m a zero gate voltage drain current gate-body leakage current t r 2 ns t d(off) 17 ns t f 3.5 ns t rr 7 8.7 10.5 ns q rr 11 13.5 16 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =20a, di/dt=500a/ m s turn-on rise time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0: aug 2011 www.aosmd.com page 2 of 6
AON6520 typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 120 140 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 6v 7v 10v 4v 4.5v 5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 0: aug 2011 www.aosmd.com page 3 of 6
AON6520 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 40 case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =4 c/w rev 0: aug 2011 www.aosmd.com page 4 of 6
AON6520 typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 50 60 70 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de - rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =64 c/w rev 0: aug 2011 www.aosmd.com page 5 of 6
AON6520 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0: aug 2011 www.aosmd.com page 6 of 6
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